Assessment of AlGaN channel high-electron mobility transistors on silicon for high-temperature power electronics

Wide and ultrawide bandgap semiconductors present novel opportunities for advancing power electronics, particularly in domains where high-voltage operation and elevated temperature stability are required. In this context, AlGaN/AlGaN heterostructures emerge as promising candidates due to their better intrinsic material properties compared to AlGaN/GaN heterostructures. Furthermore, the tunability of the aluminum molar fraction within AlGaN provides more possibilities for semiconductor engineering. This investigation focuses on evaluating the temperature operation of AlGaN channel high-electron mobility transistors grown on silicon substrates with different aluminum contents. The objective is to assess the thermal reliability of these devices for high-temperature power applications. The results highlight the low off-state current density, a more abrupt subthreshold slope, and a reduction in the temperature-induced decrease in on-state current density in Al-rich AlGaN channel high-electron mobility transistors grown on silicon substrates, positioning them as a promising solution for high-temperature power electronics.