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March 17, 2004Chinese Physics Letters

Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures

Bo Wen Jiang Ruo-Lian Zhou Jian-jun Xiaoli Ji Liang Lingyan Kong Yuechan Bo Shen Rong Zhang

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Abstract

Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures, Wen Bo, Jiang Ruo-Lian, Zhou Jian-Jun, Ji Xiao-Li, Liang Ling-Yan, Kong Yue-Chan, Shen Bo, Zhang Rong, Zheng You-Dou

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Cite This Study

Wen et al. (2004) studied this question.

synapsesocial.com/papers/6a977b817356deac8e9d97e5 https://doi.org/10.1088/0256-307x/21/4/037

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Keep reading

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Polarization charges and polarization-induced barriers in AlxGa1−xN/GaN and InyGa1−yN/GaN heterostructuresOriginal Research · 2001 · 15 citations
2Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlatticesOriginal Research · 2001 · 68 citations
3Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistorsOriginal Research · 1998 · 91 citations
4Polarization-Induced Charges in Modulation-Doped AlxGa1-xN/GaN Heterostructures Through Capacitance-Voltage ProfilingOriginal Research · 2002 · 10 citations
5Influence of strain relaxation of the AlxGa1−xN barrier on transport properties of the two-dimensional electron gas in modulation-doped AlxGa1−xN/GaN heterostructuresOriginal Research · 2000 · 77 citations

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