Diffusion of ion-implanted Sn and Sb in heavily doped n-type silicon

The diffusion of ion-implanted Sn and Sb in silicon single crystals during rapid thermal annealing at 1000 and 1050 °C has been studied as a function of P donor concentration. For extrinsic/intrinsic carrier concentration ratios (n/ni )≥20, almost identical, extremely large diffusion coefficients are found for both impurities. The diffusion coefficients exhibit approximately an (n/ni )4 dependence. The onset of this dependence is accompanied by the appearance of a new defect-complex type containing Sb or Sn, respectively.