Calculation of the Fermi level, minority carrier concentration, effective intrinsic concentration, and einstein relation in n- and p-type germanium and silicon

For the basic understanding of the physics of any semiconductor device an up-to-date knowledge of the various basic parameters is highly essential. Theoretical calculations are made of the Fermi level, minority carrier concentration, effective intrinsic concentration, and Einstein relation in n- and p-type germanium and silicon at 300 K. The reported work is based on the recently developed new transport theory of heavily doped silicon by van Overstraeten et al., It is found that the results are significantly different from the classical results.