A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs

In this article, a physics-based analytical model which considers the channel charge ( Qch) for enhancement-mode p-GaN power high-electron-mobility transistors (HEMTs) is developed. First, by considering the same dynamic channel charge ( dQch) for the Schottky/p-GaN junction capacitance ( Cj,Sch) and the p-i-n-junction capacitance ( Cp-i-n), due to the p-GaN/AlGaN junction and two-dimensional electron gas (2DEG) charge, the analytical formula to calculate the voltage drop in the p-GaN layer ( VpGaN) is presented. Second, by implementing the analytical formulae in the advanced SPICE model (ASM) GaN model, the proposed physics-based model reliably fits the measured C- V and ID- VGcharacteristics of the samples under different processing conditions. This provides significant insight regarding the Mg concentration, the voltage drop at the Schottky metal/p-GaN junction ( Vj,Sch), and the voltage drop at the p-GaN/AlGaN junction ( Vp-i-n). Finally, the ID- VGand ID- VDcharacteristics of enhancement-mode p-GaN power HEMTs are modeled, displaying good agreement with the experimental data.