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February 21, 2006IEEE Transactions on Electron Devices

On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT

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Authors

COC. H. OxleyDe Montfort UniversityMUMichael J. UrenUniversity of BristolACA. J. CoatesDepartment of Space

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Oxley et al. (2006) studied this question.

synapsesocial.com/papers/6a97806e44220fce7874b03fhttps://doi.org/10.1109/ted.2005.863540
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