Pulsed bias/pulsed RF characterization measurement system of FET at constant intrinsic voltages

For the first time to our knowledge, a pulsed measurement system has been developed which supports the simultaneous measurement of pulsed Ids(Vds, Vgs) and pulsed scattering parameters of FETs at constant intrinsic voltages. This tool is very useful for the development of nonlinear electrical models of microwave active devices. Indeed, the nonlinear electrical models predefined in the commercial software impose on the user the need to determine the behavior of the active devices at constant intrinsic voltages.