Hot electrons and phonons excited in GaAs by subpicosecond laser pulses have been studied by inelastic light scattering for photoexcited electron densities varying between 10¹⁷ and 10¹⁹ cm^-3. Transient overshoot of longitudinal-optical (LO) phonon temperature above the electron temperature has been observed. This is explained by the fast production of zone-center LO phonons by hot electrons combined with slower reabsorption of the emitted phonons due to rapid cooling of {Γ} valley electrons by intervalley scattering.
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Kim et al. (1990) studied this question.
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