Time-resolved resonant Raman spectroscopy has been used to study the properties of nonequilibrium GaAs LO phonons generated as a result of the cascade of photoexcited carriers in GaAs quantum wells. The average population relaxation time of these LO phonons, which are responsible for hot-phonon effects in GaAs quantum wells, is directly measured to be 8±{}1 ps at T10 K. These experimental results should help determine quantitatively and accurately the role hot phonons play in the hot-carrier dynamics of multiple-quantum-well structures.
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Tsen et al. (1989) studied this question.
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