A rapid infra-red (IR) lamp system used to alloy Au-Ge ohmic contacts to n-GaAs has yielded specific contact resistivity a factor of 3 lower than achieved by conventional graphite strip heater. In this initial study temperatures between 430 and 445°C and alloying times of 1 to 5 s have produced the best results.
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Gill et al. (1984) studied this question.