The dc conductivity of V2O5-Bi2O3-TeO2 glasses prepared by press-quenching was studied at temperatures from RT to 473K and the mechanism of conduction was discussed. The glasses were found to be n-type semiconductors and gave the conductivities of 6.6×10-6-3.0×10-4S⋅cm-1 at 473K, activation energies of 0.42-0.53eV for V2O5=30-69mol%. The conduction was confirmed to be due to small polaron hopping and was adiabatic for V2O5>50mol% and non-adiabatic for V2O5<50mol%. The polaron band width ranged from J=0.02 to 0.11eV, depending highly upon the V-V spacing. The carrier mobility was evaluated to be 10-7-10-5cm2V-1s-1 which varied extensively with V2O5 concentration. The estimated carrier density was 0.8-1.3×1020cm-3, almost independent of V2O5 content in the glasses.
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Mori et al. (1993) studied this question.