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January 31, 2014IEEE Transactions on Electron Devices

Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-k Passivation Layer

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HHHideyuki HanawaHOHiraku OnoderaANAtsushi Nakajima

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Hanawa et al. (2014) studied this question.

synapsesocial.com/papers/6a978c1f1048ae47fb76f03ehttps://doi.org/10.1109/ted.2014.2298194
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