An Investigation of Electrical and Dielectric Parameters of Sol–Gel Process Enabled β -Ga2O3 as a Gate Dielectric Material

In this paper, β-Ga2O3thin films were grown on a p-Si substrate using the sol-gel method. Structural characterization of the films was performed using X-ray diffraction. Electrical parameters such as breakdown field, interface traps density (Dit), and series resistance (Rs) were investigated at room temperature. The interface trap density was found to be 1012eV-1cm-2using the Hill-Coleman method. This result is valuable for MOS capacitor applications. Dielectric parameters were investigated in the wide frequency range (20 kHz-1 MHz) at room temperature. We observed that these parameters have a strong dependence on frequency and voltage.