The observation of hole traps in small-signal GaAs MESFETs has been extensively reported in the literature and has been atributed to trapping at the active layer/substrate interface. Evidence is presented here to suggest that the main contribution to the ‘hole trap-like’ spectrum in conductance DLTS is the modulation of the surface depletion layer in the ungated access regions of the device.
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Blight et al. (1986) studied this question.