A WSi gate Al x Ga1-x As/GaAs MIS-like heterostructure FET was fabricated. The threshold voltage of this FET is independent of the Al x Ga1-x As barrier-layer thickness in contrast with that of an HEMT. There is little variation in the threshold voltage (0.05 V) against a large change in the barrier-layer thickness. This ensures a uniform threshold voltage as well as the reproducibility of this FET.
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Maruo et al. (1986) studied this question.
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