In this paper, the recovery of the ferroelectric properties of Ir/Pb(Zr,Ti)O3/Ir thin film capacitors damaged by annealing in a hydrogen ambient has been described. The ferroelectric properties of the capacitors markedly degrade as a result of heat treatment in a hydrogen ambient at 400°C. These properties can be easily recovered to their initial state by post annealing using a rapid thermal annealing process in an oxygen ambient at 400°C for 1 min.
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Sakoda et al. (1998) studied this question.
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