We performed a bending experiment on a thin Pb(Zr,Ti)O3 (PZT) film prepared by chemical solution deposition. The changes of dielectric constant under stress were measured upon sweeping the electric field applied across the PZT film. It was found that depending on the strength of the electric field and thereby on the polarization state of the ferroelectric film, stress acts as a promoter as well as an obstructor for the polarization. An explanation for the abnormal dielectric behavior is given based on the domain wall motion and the reorientation of polarization state.
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Kang et al. (2006) studied this question.
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