High Density and Low Leakage Current in TiO₂ MIM Capacitors Processed at 300 ∘ C

We report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300degC, which show a capacitance density of 28 fF/mum2and a leakage current of 3 times 10-8(25degC) or 6 times 10-7(125degC) A/cm2at -1 V. This performance is due to the combined effects of 300degC nanocrystallized high-kappa TiO2, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.