Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
April 23, 2005Applied Physics LettersOpen Access

Resonant-tunneling electron emitter in an AlN∕GaN system

View Full Paper
Ask AI
Bookmark
Share

Authors

AIAtsuko IshidaSt. Marianna University School of MedicineYIY. InoueShizuoka UniversityHFH. FujiyasuTokyo Institute of Technology

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Ishida et al. (2005) studied this question.

synapsesocial.com/papers/6a97903e197de90645e32c7ehttps://doi.org/10.1063/1.1922081
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Spontaneous polarization and piezoelectric constants of III-V nitrides1997 · 3,112 citations
  2. 2Piezoelectric surface barrier lowering applied to InGaN/GaN field emitter arrays1998 · 23 citations
  3. 3Negative electron affinity at the Cs/AlN(0001) surface1999 · 28 citations
  4. 4Quantum-Cascade Structure in AlN/GaN System Assisted by Piezo-Electric Effect2002 · 12 citations
  5. 5Superlattice band structure in the envelope-function approximation1981 · 1,323 citations