Analytical and Simulation-Based Investigation of Breakdown and Dynamic On-Resistance in InAlGaN MIS-HEMTs with Multi-Field Plate Designs

High Resolution Image Download MS PowerPoint Slide This study systematically investigates various field plate (FP) configurations─including continuous, discrete, gate-connected, and source-connected designs─applied to InAlGaN MIS-HEMT devices. Experimental analyses of breakdown voltage, gate capacitance, and dynamic on-resistance ( R on ) reveal that optimized FP designs, particularly dual-layer gate-connected structures like F2F4 and D2D4, significantly enhance voltage robustness and dynamic performance without excessively increasing capacitance. Discrete FPs effectively redistribute electric fields through gap-induced modulation, while source-connected FPs show degraded performance primarily due to their structural resemblance to discrete gate designs without optimal field termination, resulting in insufficient suppression of surface effects. TCAD simulations further confirm that FP engineering reshapes electric field profiles and breakdown pathways, highlighting GaN/SL and other heterointerfaces as primary failure sites under vertical stress. By correlating lateral and vertical field behavior with FP geometry and configuration, this work offers valuable insights into electric field management strategies, providing a robust framework for future high-voltage InAlGaN-based device design.