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October 26, 1987Applied Physics Letters

Evidence by Raman spectroscopy and x-ray diffraction of a strong influence of H2O traces on the metalorganic vapor phase epitaxy of GaAs on Si

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AFA. FreundlichUniversity of HoustonALA. LeycurasCentre National de la Recherche ScientifiqueJGJ. C. GrenetUniversité Côte d'Azur

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Freundlich et al. (1987) studied this question.

synapsesocial.com/papers/6a979101713b4e110fe3359ehttps://doi.org/10.1063/1.98676
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