AlGaN–GaN HEMTs on Si With Power Density Performance of 1.9 W/mm at 10 GHz

AlGaN-GaN high electron mobility transistors (HEMTs) on silicon substrate are fabricated. The device with a gate length of 0.3-μm and a total gate periphery of 300 μm, exhibits a maximum drain current density of 925 mA/mm at V/sub GS/=0 V and V/sub DS/=5 V with an extrinsic transconductance (g/sub m/) of about 250 mS/mm. At 10 GHz, an output power density of 1.9 W/mm associated to a power-added efficiency of 18% and a linear gain of 16 dB are achieved at a drain bias of 30 V. To our knowledge, these power results represent the highest output power density ever reported at this frequency on GaN HEMT grown on silicon substrates.