Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

Jie Yang; Sharon Cui; T. P.; Ting-Hsiang Hung; Digbijoy N. Nath; Sriram Krishnamoorthy; Siddharth Rajan

doi:10.1063/1.4834698

November 25, 2013Applied Physics Letters

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

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Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Jie Yang, Sharon Cui, T. P. Ma, Ting-Hsiang Hung, Digbijoy Nath, Sriram Krishnamoorthy, Siddharth Rajan; Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors. Appl. Phys. Lett. 25 November 2013; 103 (22): 223507. https://doi.org/10.1063/1.4834698 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search

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synapsesocial.com/papers/6a97910b2855ae6cf374bee3 https://doi.org/10.1063/1.4834698

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Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

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