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May 1, 1999Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Growth, optical, and electron transport studies across isotype n-GaAs/n-Ge heterojunctions

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Authors

MHMantu K. HudaitVirginia TechSKS. B. KrupanidhiIndian Institute of Science Bangalore

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Hudait et al. (1999) studied this question.

synapsesocial.com/papers/6a97911080327c22c38bd65ahttps://doi.org/10.1116/1.590684
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  1. 1Photoluminescence of Al<i>x</i>Ga1−<i>x</i>As alloys1994 · 497 citations
  2. 2Barrier determinations on Ge–Al<i>x</i>Ga1−<i>x</i>As and GaAs–Al<i>x</i>Ga1−<i>x</i>As <i>p-n</i> heterojunctions1973 · 16 citations