Experimental characterization reveals bias-induced hysteresis and filamentary breakdown in carbon-doped gallium nitride layers, suggesting trap-mediated resistive switching mechanisms.
A breakdown phenomenon is studied in thin carbon doped GaN layers (GaN:C; carbon concentration 1019 cm−3) embedded between a top metal electrode and bottom n‐doped GaN (n‐GaN). When slowly sweeping positive bias V at the top electrode up and down, a hysteresis is found with transitions to on‐ and off‐states at voltages and (
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Koller et al. (2019) studied this question.
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