Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
September 2, 1996Applied Physics Letters

Evidence of interface trap creation by hot-electrons in AlGaAs/GaAs high electron mobility transistors

View Full Paper
Ask AI
Bookmark
Share

Authors

GMGaudenzio MeneghessoUniversity of PaduaAPA. PaccagnellaUniversity of PaduaYHY. HaddabAmplitude Technologies (France)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Meneghesso et al. (1996) studied this question.

synapsesocial.com/papers/6a97918d329299b5dce331f2https://doi.org/10.1063/1.117598
View Full Paper
Ask AI
Bookmark
Share