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We have investigated the spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy. A strong photoluminescence signal was observed only from samples grown in a narrow substrate temperature range around 400 °C with InSb-like interfaces. From an analysis of the photoluminescence energy with the excitation density, we demonstrated the formation of triangular quantum wells for holes in the GaSb barriers close to the interfaces. Finally, the temperature dependence of the photoluminescence peak energy showed a deviation from the InAs band gap evolution at low temperature, which could be related to the type II broken gap band alignment.
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Bertru et al. (1999) studied this question.
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