Strained quantum well diode lasers consisting of compressively strained InAsSb active layers and tensile strained InAlAsSb barrier layers have exhibited CW power of 215 mW/facet at 80 K. The internal quantum efficiency and internal loss coefficient at 80 K are estimatcd to be 63% and 9 cm-1, respectively.
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Choi et al. (1996) studied this question.
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