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May 1, 2004Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Incorporation efficiency of carbon in GaAs using carbon tetrabromide in solid source molecular beam epitaxy

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Authors

ZSZhen SunEast China University of Science and TechnologySYS. F. YoonMichigan State UniversityKTKian Hua TanCentre National de la Recherche Scientifique

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Sun et al. (2004) studied this question.

synapsesocial.com/papers/6a979224378ea914c1facb2ehttps://doi.org/10.1116/1.1736644
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Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Carbon tetrabromide carbon doping of molecular beam epitaxial (GaAs) films1994 · 25 citations
  2. 2Iodine and carbon tetrabromide use in solid source molecular beam epitaxy1998 · 7 citations