The photopumped laser operation of GaAs doping superlattices grown by molecular beam epitaxy is reported. As expected, laser emission is at lower energy than that of bulk undoped GaAs. This emission is attributed to donor to acceptor transitions that occur after the doping superlattice is excited to a flatband condition. Laser operation via electron to hole tunneling and recombination at lower energies, which requires extremely low thresholds, is not observed.
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Vojak et al. (1986) studied this question.
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