Monolithically integrated inverter amplifiers based on MOCVD-grown GaInAs/InP heterojunction FETs have been made. 1 μm-gate-length FETs exhibited a typical pinchoff voltage of −1.5V, transconductance of 160mS/mm and DC drain conductance of 2–4mS/mm, at zero gate bias. Amplifier voltage gain as high as 27 was measured at DC, dropping to 11 above 1 MHz due to the presence of an extra frequency-dependent drain conductance component.
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Dawe et al. (1988) studied this question.
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