We studied the formation of oxygen clusters in quenched Czochralski (Cz)-grown silicon crystals. The formation and the dissociation of vacancy-oxygen complexes introduced by electron irradiation (3 MeV, 1×1018 e-/ cm2) were studied by infrared spectroscopy and the positron annihilation technique. From the annealing behavior of vacancy-oxygen complexes, it is found that oxygen clusters are introduced by quenching. These clusters are nuclei for enhanced oxygen precipitation in quenched Cz-grown silicon crystals.
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Ikari et al. (1994) studied this question.
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