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The light output power and wall-plug efficiency of the Si nanocrystal (nc-Si) light-emitting diode (LED) were significantly enhanced by employing the multiple-luminescent structures. This improvement was attributed to a strong confinement of carriers in the SiNx luminescent layers containing the nc-Si due to the band offset between the luminescent layer and barrier layer.
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Huh et al. (2010) studied this question.
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