The influence of the implantation dose and energy on the electroluminescence of Si+-implanted amorphous SiO2thin films

Visible and infrared (IR) electroluminescence (EL) has been observed from a metal–oxide–semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded in the gate oxide fabricated with low-energy ion implantation. The EL spectra are found to consist of four Gaussian-shaped luminescence bands with their peak wavelengths at ∼460, ∼600, ∼740, and ∼1260 nm, respectively, among which the ∼600 nm band is the dominant one. Different nanocrystal distributions are achieved by varying the implanted Si ion dose and implantation energy. The nanocrystal distribution is found to play an important role in the EL. The influence of the applied voltage, the implantation dose, and implantation energy on the luminescence bands has been investigated.