A 10 nm graded band-gap insulator obtained by oxidizing the surface of a very thin thermal nitride film has been used as the first insulator of a floating gate avalanche-injection EAROM cell. A low-energy barrier of thermal nitride and a cell optimization considering the capacitive coupling of the floating gate to the drain has enabled low single-polar voltage alterability on a 2 kbit test vehicle. Good write/erase endurance has been also obtained owing to the low injection field applied to the first insulator of the avalanche injection approach.
No takes yet. Share an insight, caveat, or question.
Hijiya et al. (1982) studied this question.
Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context: