The influence of low energy (80–500 eV) Ar-ion milling cleaning techniques on InAs based quantum well structures is investigated. It is found that both etching with a Kaufmann source and sputter-etching with a rf-plasma enhances the electron density and reduces the mobility. An anneal at 180 °C has little effect, and only recovers damage caused by low energy (80 eV) Kaufmann etching.
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Magnée et al. (1995) studied this question.
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