A new method for the parallel fabrication of carbon nanotube (CNT) electronic devices is described. Self‐assembly via magnetic entrapment exploits magnetic fields generated within micrometer‐ or nanometer‐scale devices for the controlled deposition of susceptible species onto predefined contacts (see Figure). The fabrication of carbon nanotube field‐effect transistors (CNFETs) using this method are discussed.
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Long et al. (2004) studied this question.
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