Low-Voltage Poly-Si TFTs with Solution-Processed Aluminum Oxide Gate Dielectric

We report a solution-processed aluminum oxide (AlO x ) film which is used as a gate dielectric for low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs). After oxygen plasma treatment on the LTPS layer, AlO x layer could be uniformly coated on the poly-Si with a sol-gel method. The p-channel TFTs fabricated with an AlO x gate dielectric exhibited a field-effect mobility of 53.91 cm 2 /V s, threshold voltage of −1.7 V and gate voltage swing of 0.265 V/decade. A twenty-three stage ring oscillator made of the LTPS TFTs showed a switching speed of 1.32 MHz at a supply voltage of 15 V.