Tight-binding calculation of the band offset at the Ge-GaAs (110) interface using a local charge-neutrality condition

A tight-binding Green's-function calculation of the electronic properties of the Ge-GaAs (110) interface is presented. The atomic charges in the vicinity of the interface are determined by use of a continued-fraction expansion technique. Approximate self-consistency is achieved through the use of a local neutrality condition which is shown to be justified in this context. Finally the band offset is calculated and compared to experimental and other calculated values.