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In this paper a semiempirical model is presented which describes the amount of silicon that is molten in laser recrystallization of polycrystalline silicon layers. The model is based on the fitting of rather simple, physically meaningful expressions to experimentally obtained values for the width of the molten zone induced by a scanning laser beam. The influence of laser power, scan velocity, preheating temperature, and capping layer structure can be described.
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Willems et al. (1987) studied this question.
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