The effect of ultraviolet (UV) irradiation on the effective minority-carrier recombination lifetime (τeff) in silicon wafers was studied by a noncontact laser/microwave photoconductance (LM-PC) technique. The τeffgreatly increased in samples with native oxide after the irradiation, which can be attributed to an increase in the surface recombination lifetime (τs) due to the change in the surface carrier recombination velocity (S). The dominant factor for the τschange can be negative charges created by the photo-induced electrons in the surface area. The band bending near the Si-SiO2interface, which is caused by the electric field generated by negative charges, plays a dominant role in changingS.
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Katayama et al. (1992) studied this question.
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