Optical interband transitions in a series of In0.23Ga0.77As–GaNxAs1−x quantum well samples are investigated. For changing nitrogen content, a type I-type II transition is identified by a detailed analysis of photoluminescence and photoreflectance spectra. Experimental results are compared systematically with spectra calculated by a microscopic theory. A valence band offset parameter of (1.5±0.5)eV is extracted for this heterostructure system.
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Schlichenmaier et al. (2005) studied this question.
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