The SIMS method was applied to determine the near‐surface segregation profiles of Cr in Cr‐doped NiO single crystals annealed at 1353 K in air and in argon. The decrease of oxygen partial pressure in the gas atmosphere favours surface segregation of Cr. Furthermore, the enrichment factor increases when the Cr bulk concentration decreases. The present research indicates a dynamic state of the surface layer of oxide crystals which may vary as a result of changes in gas composition.
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Hirschwald et al. (1985) studied this question.
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