A modification of the modulated elemental reactants synthetic technique was developed and used to synthesize eleven members of the [(SnSe) 1.15 ] m (TaSe 2 ) n family of compounds, with m and n equal to integer values between 1 and 6. Each of the intergrowth compounds contained highly oriented intergrowths of SnSe bilayers and TaSe 2 monolayers with abrupt interfaces perpendicular to the c -axis. The c -lattice parameter increased 0.579(1) nm per SnSe bilayer and 0.649(1) nm per Se–Ta–Se trilayer (TaSe 2 ) as m and n were varied. ab -plane X-ray diffraction patterns and transmission electron microscope images revealed a square in-plane structure of the SnSe constituent, a hexagonal in-plane structure for the TaSe 2 constituent, and rotational disorder between the constituent layers. Temperature dependent electrical resistivity, measured on several specimens, revealed metallic behavior, and a simple model is presented to explain the differences in resistivity as a function of m and n .
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Atkins et al. (2012) studied this question.
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