Photovoltage spectroscopy and laser-scanning photovoltage measurements have been utilized to assess the effect of hydrogenation on electric properties of epitaxial silicon-on-sapphire (SOS) films. It has been found that hydrogenation suppresses deep levels in the middle of the energy gap, and significantly decreases the magnitude of microscopic inhomogeneities. The present results may have implications for SOS electronic devices and demonstrate a relationship between structured defects (dangling bonds) and electronic properties of SOS films.
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Jastrzȩbski et al. (1982) studied this question.
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