Answers are grounded in this paper and cite their sources.
We report the observation of strong room temperature absorption peaks between 4 and 7 μm in strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double-barrier multiple-quantum-well structures. The observed peaks at 4.4, 5.0, and 7.2 μm are attributed to E3→E4, E2→E3, and E1→E2 Γ-Γ electron intersubband transitions, respectively, the transition energies are in good agreement with our theoretical model. The large conduction band offset and low effective mass in this material system, as well as the possibility for strain compensation between wells and barriers, make this a promising route to efficient room temperature quantum well infrared photodetectors.
No takes yet. Share an insight, caveat, or question.
Lai et al. (2003) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: