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May 15, 2000Journal of Applied Physics

Optical properties of CuGaSe2 and CuAlSe2 layers epitaxially grown on Cu(In0.04Ga0.96)Se2 substrates

Sho Shirakata Shigefusa F. Chichibu Hideto Miyake K Sugiyama

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Abstract

Photoluminescence (PL) study has been performed on epitaxial layers of CuGaSe2 and CuAlSe2 grown by metalorganic chemical vapor epitaxy on CuGa0.96In0.04Se2 substrates prepared by the traveling heater method. PL properties of epilayers are compared with each other for those grown on GaAs (100), CuGa0.96In0.04Se2 (100), CuGa0.96In0.04Se2 (112), and randomly oriented CuGa0.96In0.04Se2 substrates. PL results are discussed in terms of the lattice mismatches and stress in the epilayers.

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Shirakata et al. (2000) studied this question.

synapsesocial.com/papers/6a97c4d8da663e44ef76f91f https://doi.org/10.1063/1.372983

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