Enabling Strategies in Organic Electronics Using Ordered Block Copolymer Nanostructures

Memory devices with high bit density and memory cells just 50–60 nm apart and a density of 1010cm−2 – which is not achievable with the current silicon-based lithographic techniques – are fabricated using a self-assembled block-copolymer ordered nanostructure and selectively sequestered gold nanoparticles . This result brings the idea of molecular memories a step closer to reality.