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In this paper we present embedded-cluster calculations on singly charged and neutral oxygen vacancies (or F centres) in the oxide perovskite BaTiO 3 . The simulations include Hartree-Fock theory with MP2 corrections and density-functional-theory calculations for a central quantum defect cluster and a pair-potential description of the embedding lattice. All important defect-induced lattice distortions are taken into account in this way. We discuss the possible electronic states of charged F centres and the effects of nearby acceptor-type defects. It is shown that isolated oxygen vacancies induce electronic deep-gap levels. Scenarios are discussed to account for shallow-gap levels observed experimentally.
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Donnerberg et al. (2000) studied this question.
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