The conditions essential for high field, in-plane poling were investigated for nonlinear optical (NLO), planar devices with 4-dimethylamino-4′-nitrostilbene (DANS) side-chain polymers. Applied poling field as large as 370 V/μm were achieved before breakdown occurred and a nonlinearity of d22=153 pm/V at 1064 nm (near resonant) was obtained with stable poling at 300 V/μm.
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Otomo et al. (1994) studied this question.
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